Calculation of secondary charge carrier current in submicron channel MOSFETs at stress regimes of operationBORZDOV, Vladimir; KOMAROV, Fadei; ZHEVNYAK, Oleg et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62601E.1-62601E.8, issn 0277-786X, isbn 0-8194-6325-6, 1VolConference Paper

Temperature effect on electron transport in conventional short channel MOSFETs : Monte Carlo simulationZHEVNYAK, Oleg.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 70251M.1-70251M.8, issn 0277-786X, isbn 978-0-8194-7238-0 0-8194-7238-7Conference Paper

Monte Carlo simulation of device structures with one-dimensional electron gasBORZDOV, Vladimir; KOMAROV, Fadei; GALENCHIK, Vadim et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 62601N.1-62601N.11, issn 0277-786X, isbn 0-8194-6325-6, 1VolConference Paper